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CSD16407Q5C

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Part No :: CSD16407Q5C

Manufacturer: Rochester Electronics

Description: OXIDE SEMICONDUCTOR FET

Catalog: Transistors - FETs, MOSFETs - Single

Availability: 19703 pieces

Shipped from: HK warehouse

Expected Shipping Date: Nov 17 - Nov 21 2024

Type	Description
Series:	NexFET™
Package:	Bulk
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	25 V
Current - Continuous Drain (Id) @ 25°C:	31A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	2.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:	1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	18 nC @ 4.5 V
Vgs (Max):	+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds:	2.66 pF @ 12.5 V
FET Feature:	-
Power Dissipation (Max):	3.1W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-VSON-CLIP (5x6)
Package / Case:	8-PowerTDFN

CSD16407Q5C is available at GangBo-ic.com, Please review product page below for detailed information, including CSD16407Q5C price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for CSD16407Q5C to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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