MOSFET N-CH 200V 86A TO247
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 86A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 (IXTH) |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IGW40N60TPRochester Electronics |
IGW40N60 - DISCRETE IGBT WITHOUT |
|
SIHB25N50E-GE3Vishay / Siliconix |
MOSFET N-CH 500V 26A TO263 |
|
R6012JNJGTLROHM Semiconductor |
MOSFET N-CH 600V 12A LPTS |
|
CSD19532Q5BTTexas Instruments |
MOSFET N-CH 100V 100A 8VSON |
|
IRLU110PBFVishay / Siliconix |
MOSFET N-CH 100V 4.3A TO251AA |
|
FDD6670SRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDPF12N50UTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 10A TO220F |
|
IRFR1N60ATRPBFVishay / Siliconix |
MOSFET N-CH 600V 1.4A DPAK |
|
IXTT26N50PWickmann / Littelfuse |
MOSFET N-CH 500V 26A TO268 |
|
RW1C025ZPT2CRROHM Semiconductor |
MOSFET P-CH 20V 2.5A 6WEMT |
|
IRFU3607PBFIR (Infineon Technologies) |
MOSFET N-CH 75V 56A IPAK |
|
VP0104N3-GRoving Networks / Microchip Technology |
MOSFET P-CH 40V 250MA TO92-3 |
|
AOWF11N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 11A TO262F |