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IPD60R280P7SE8228AUMA1

IPD60R280P7SE8228AUMA1

MOSFET N-CH 600V 12A TO252-3

MSLL6060-300

MSLL6060-300

RF FERRITE SHEET 2.362"X2.362"

CY7C185-20VI

CY7C185-20VI

STANDARD SRAM, 8KX8, 20NS

IPD60R280P7SE8228AUMA1

IPD60R280P7SE8228AUMA1

Image is for reference, please contact us to get the real picture

Part No :

IPD60R280P7SE8228AUMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 600V 12A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
991799 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 16 - Nov 20 2024
Type Description
Series:CoolMOS™ P7
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:280mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id:4V @ 190µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:761 pF @ 400 V
FET Feature:-
Power Dissipation (Max):53W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IPD60R280P7SE8228AUMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPD60R280P7SE8228AUMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPD60R280P7SE8228AUMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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