MOSFET N-CH 600V 12A TO252-3
RF FERRITE SHEET 2.362"X2.362"
STANDARD SRAM, 8KX8, 20NS
Type | Description |
---|---|
Series: | CoolMOS™ P7 |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 280mOhm @ 3.8A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 190µA |
Gate Charge (Qg) (Max) @ Vgs: | 18 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 761 pF @ 400 V |
FET Feature: | - |
Power Dissipation (Max): | 53W (Tc) |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO252-3 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AOTF10N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 10A TO220-3F |
|
BUK962R8-30B,118Nexperia |
MOSFET N-CH 30V 75A D2PAK |
|
IRLR2908TRLPBFRochester Electronics |
IRLR2908 - HEXFET POWER MOSFET |
|
IPB60R070CFD7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 31A TO263-3-2 |
|
IRLR3802TRPBF-INFRochester Electronics |
IRLR3802 - HEXFET POWER MOSFET |
|
STF130N10F3STMicroelectronics |
MOSFET N-CH 100V 46A TO220FP |
|
DMN2300UFB-7BZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 1.32A 3DFN |
|
STP15N65M5STMicroelectronics |
MOSFET N CH 650V 11A TO220 |
|
FDP8870Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
2SK3541T2LROHM Semiconductor |
MOSFET N-CH 30V 100MA VMT3 |
|
IXTA90N20X3Wickmann / Littelfuse |
MOSFET N-CH 200V 90A TO263 |
|
PHB29N08T,118Nexperia |
MOSFET N-CH 75V 27A D2PAK |
|
DMTH6005LFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 19.7A/100A PWRDI |