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RM8N650IP

RM8N650IP

MOSFET N-CHANNEL 650V 8A TO251

RM8N650IP

RM8N650IP

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Part No :

RM8N650IP

Manufacturer
Rectron USA
Description
MOSFET N-CHANNEL 650V 8A TO251
Catalog
Transistors - FETs, MOSFETs - Single
Availability
731773 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 27 - Oct 01 2024
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:540mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:680 pF @ 50 V
FET Feature:-
Power Dissipation (Max):80W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-251
Package / Case:TO-251-3 Stub Leads, IPak
RM8N650IP is available at GangBo-ic.com, Please review product page below for detailed information, including RM8N650IP price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RM8N650IP to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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