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R6007KNX

R6007KNX

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Part No :

R6007KNX

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 600V 7A TO220FM
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10474 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 27 - Mar 03 2025
PDF
R6007KNX PDF
Type Description
Series:*
Package:BulkBulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:620mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id:5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:14.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:470 pF @ 25 V
FET Feature:-
Power Dissipation (Max):46W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FM
Package / Case:TO-220-3 Full Pack
R6007KNX is available at GangBo-ic.com, Please review product page below for detailed information, including R6007KNX price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for R6007KNX to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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