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IPP50R190CEXKSA1

IPP50R190CEXKSA1

MOSFET N-CH 500V 18.5A TO220-3

IPP50R190CEXKSA1

IPP50R190CEXKSA1

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Part No :

IPP50R190CEXKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 500V 18.5A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10629 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 07 - Jan 11 2025
PDF
IPP50R190CEXKSA1 PDF
Type Description
Series:CoolMOS™ CE
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:18.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):13V
Rds On (Max) @ Id, Vgs:190mOhm @ 6.2A, 13V
Vgs(th) (Max) @ Id:3.5V @ 510µA
Gate Charge (Qg) (Max) @ Vgs:47.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1137 pF @ 100 V
FET Feature:-
Power Dissipation (Max):127W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
IPP50R190CEXKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPP50R190CEXKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPP50R190CEXKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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