MOSFET N-CH 60V 120A TO220-3
Type | Description |
---|---|
Series: | PowerTrench® |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 4mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 133 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 8.235 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 231W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3 |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SIHD6N65E-GE3Vishay / Siliconix |
MOSFET N-CH 650V 7A DPAK |
|
SI9407BDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 60V 4.7A 8SO |
|
SQJ488EP-T2_BE3Vishay / Siliconix |
MOSFET N-CH 100V 42A PPAK SO-8 |
|
FDB045AN08A0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 75V 19A/90A D2PAK |
|
SQ3426AEEV-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 7A 6TSOP |
|
IPDD60R105CFD7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 31A HDSOP-10 |
|
SIHF28N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 28A TO220 |
|
IPA060N06NXKSA1Rochester Electronics |
MOSFET N-CH 60V 45A TO220-FP |
|
NTE2383NTE Electronics, Inc. |
MOSFET P-CH 100V 10.5A TO220 |
|
SIHH14N60E-T1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 16A PPAK 8 X 8 |
|
FDD2612Rochester Electronics |
MOSFET N-CH 200V 4.9A TO252 |
|
NP89N055PUK-E1-AYRenesas Electronics America |
MOSFET N-CH 55V 90A TO263-3 |
|
HUF76139S3STRochester Electronics |
N-CHANNEL POWER MOSFET |