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BSZ021N04LS6ATMA1

BSZ021N04LS6ATMA1

MOSFET N-CH 40V 25A/40A TSDSON

BSZ021N04LS6ATMA1

BSZ021N04LS6ATMA1

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Part No :

BSZ021N04LS6ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 40V 25A/40A TSDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
281628 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 29 - Jan 02 2024
Type Description
Series:OptiMOS™ 6
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:25A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2700 pF @ 20 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 83W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8-FL
Package / Case:8-PowerTDFN
BSZ021N04LS6ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSZ021N04LS6ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSZ021N04LS6ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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