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IMBG120R045M1HXTMA1

IMBG120R045M1HXTMA1

TRANS SJT N-CH 1.2KV 47A TO263

IMBG120R045M1HXTMA1

IMBG120R045M1HXTMA1

Image is for reference, please contact us to get the real picture

Part No :

IMBG120R045M1HXTMA1

Manufacturer
IR (Infineon Technologies)
Description
TRANS SJT N-CH 1.2KV 47A TO263
Catalog
Transistors - FETs, MOSFETs - Single
Availability
661466 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 24 - Dec 28 2024
Type Description
Series:CoolSiC™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):1.2 kV
Current - Continuous Drain (Id) @ 25°C:47A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:63mOhm @ 16A, 18V
Vgs(th) (Max) @ Id:5.7V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 18 V
Vgs (Max):+18V, -15V
Input Capacitance (Ciss) (Max) @ Vds:1.527 nF @ 800 V
FET Feature:Standard
Power Dissipation (Max):227W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7-12
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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