MOSFET P-CHANNEL 60V 16A TO252-2
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 48mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1810 pF @ 30 V |
FET Feature: | - |
Power Dissipation (Max): | 25W (Tc) |
Operating Temperature: | -50°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252-2 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDP24N40Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 24A TO220-3 |
|
DMN3025LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N CH 30V 7.2A 8-SO |
|
IRFR010TRPBFVishay / Siliconix |
MOSFET N-CH 50V 8.2A DPAK |
|
PMPB12UN,115Rochester Electronics |
MOSFET N-CH 20V 7.9A 6DFN |
|
SIR610DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 200V 35.4A PPAK SO-8 |
|
SFH9140Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
SUM60N02-3M9P-E3Vishay / Siliconix |
MOSFET N-CH 20V 60A TO263 |
|
STD100N3LF3STMicroelectronics |
MOSFET N-CH 30V 80A DPAK |
|
SUM60020E-GE3Vishay / Siliconix |
MOSFET N-CH 80V 150A TO263 |
|
STB21NM60NDSTMicroelectronics |
MOSFET N-CH 600V 17A D2PAK |
|
FKP280ASanken Electric Co., Ltd. |
MOSFET N-CH 280V 40A TO3PF |
|
BUK6D43-40PXNexperia |
MOSFET P-CH 40V 6A DFN2020MD-6 |
|
IXFA76N15T2Wickmann / Littelfuse |
MOSFET N-CH 150V 76A TO263AA |