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PSMN050-80BS,118

PSMN050-80BS,118

POWER FIELD-EFFECT TRANSISTOR, 2

PSMN050-80BS,118

PSMN050-80BS,118

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Part No :

PSMN050-80BS,118

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 2
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13200 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 22 - Dec 26 2024
PDF
PSMN050-80BS,118 PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:46mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:633 pF @ 12 V
FET Feature:-
Power Dissipation (Max):56W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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