MOSFET N-CH 600V 11A TO220
Type | Description |
---|---|
Series: | MDmesh™ M2-EP |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 378mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 17 nC @ 10 V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 590 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 110W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220 |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NTB082N65S3FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 40A D2PAK |
|
APT34M120JRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 35A SOT227 |
|
IRF6617TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 14A DIRECTFET |
|
IRFBG20PBFVishay / Siliconix |
MOSFET N-CH 1000V 1.4A TO220AB |
|
IXFN20N120PWickmann / Littelfuse |
MOSFET N-CH 1200V 20A SOT-227B |
|
SPD06N60C3ATMA1Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 6 |
|
SUD70090E-GE3Vishay / Siliconix |
MOSFET N-CH 100V 50A TO252 |
|
ISL9N312AD3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDMS3662Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 8.9A/49A 8PQFN |
|
IRFS750ARochester Electronics |
MOSFET N-CH 400V 8.4A TO220F |
|
SQS482ENW-T1_GE3Vishay / Siliconix |
MOSFET N-CH 30V 16A PPAK1212-8W |
|
FCH22N60NSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 22A TO247-3 |
|
FJ4B01120L1Panasonic |
MOSFET P-CH 12V 2.6A ULGA004 |