MOSFET N-CH 900V 4.7A TO247-3
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 900 V |
Current - Continuous Drain (Id) @ 25°C: | 4.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2.5Ohm @ 2.8A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 120 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1600 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 150W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRFU320Rochester Electronics |
MOSFET N-CH 400V 3.1A TO251AA |
|
SUP70101EL-GE3Vishay / Siliconix |
MOSFET P-CH 100V 120A TO220AB |
|
DMP2033UCB9-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 4.2A U-WLB1515-9 |
|
2SK1402A-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
RQ5E025TNTLROHM Semiconductor |
MOSFET N-CH 30V 2.5A TSMT3 |
|
IRFW610BTMFP001Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
DMP4013LFGQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V 10.3A PWRDI3333 |
|
STQ1HN60K3-APSTMicroelectronics |
MOSFET N-CH 600V 400MA TO92-3 |
|
DMT8008SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 80V 83A PWRDI5060-8 |
|
DMN10H170SVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 2.6A TSOT26 |
|
SI4430BDY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 14A 8SO |
|
FCP400N80ZRochester Electronics |
MOSFET N-CH 800V 14A TO220-3 |
|
FDH038AN08A1Rochester Electronics |
MOSFET N-CH 75V 22A/80A TO247-3 |