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IRLR8729PBF

IRLR8729PBF

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IRLR8729PBF

IRLR8729PBF

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Part No :

IRLR8729PBF

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 30V 58A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11019 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IRLR8729PBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:58A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:8.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1350 pF @ 15 V
FET Feature:-
Power Dissipation (Max):55W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-PAK (TO-252AA)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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