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IPU80R1K2P7AKMA1

IPU80R1K2P7AKMA1

MOSFET N-CH 800V 4.5A TO251-3

AT49BV160CT-70TI

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IPU80R1K2P7AKMA1

IPU80R1K2P7AKMA1

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Part No :

IPU80R1K2P7AKMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 800V 4.5A TO251-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11425 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
IPU80R1K2P7AKMA1 PDF
Type Description
Series:CoolMOS™ P7
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id:3.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:300 pF @ 500 V
FET Feature:-
Power Dissipation (Max):37W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
IPU80R1K2P7AKMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPU80R1K2P7AKMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPU80R1K2P7AKMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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