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SI7190DP-T1-GE3

SI7190DP-T1-GE3

MOSFET N-CH 250V 18.4A PPAK SO-8

SI7190DP-T1-GE3

SI7190DP-T1-GE3

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Part No :

SI7190DP-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 250V 18.4A PPAK SO-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15166 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
SI7190DP-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:18.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:118mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:72 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2214 pF @ 125 V
FET Feature:-
Power Dissipation (Max):5.4W (Ta), 96W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
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