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SCTH35N65G2V-7

SCTH35N65G2V-7

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SCTH35N65G2V-7

SCTH35N65G2V-7

Image is for reference, please contact us to get the real picture

Part No :

SCTH35N65G2V-7

Manufacturer
STMicroelectronics
Description
SICFET N-CH 650V 45A H2PAK-7
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10650 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):18V, 20V
Rds On (Max) @ Id, Vgs:67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:3.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:73 nC @ 20 V
Vgs (Max):+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds:1370 pF @ 400 V
FET Feature:-
Power Dissipation (Max):208W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H2PAK-7
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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