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FDP12N50

FDP12N50

MOSFET N-CH 500V 11.5A TO220-3

FDP12N50

FDP12N50

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Part No :

FDP12N50

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 500V 11.5A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11304 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
FDP12N50 PDF
Type Description
Series:UniFET™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:650mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1.315 pF @ 25 V
FET Feature:-
Power Dissipation (Max):165W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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