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FDD86367

FDD86367

MOSFET N-CH 80V 100A DPAK

FDD86367

FDD86367

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Part No :

FDD86367

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 80V 100A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
090509 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
FDD86367 PDF
Type Description
Series:Automotive, AEC-Q101, PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:88 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4840 pF @ 40 V
FET Feature:-
Power Dissipation (Max):227W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-PAK (TO-252)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
FDD86367 is available at GangBo-ic.com, Please review product page below for detailed information, including FDD86367 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDD86367 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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