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BSC034N10LS5ATMA1

BSC034N10LS5ATMA1

MOSFET N-CH 100V 19A/100A TDSON

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BSC034N10LS5ATMA1

BSC034N10LS5ATMA1

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Part No :

BSC034N10LS5ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 19A/100A TDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
880488 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 01 - Dec 05 2024
Type Description
Series:OptiMOS™ 5
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:19A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.3V @ 115µA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6500 pF @ 50 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-7
Package / Case:8-PowerTDFN
BSC034N10LS5ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSC034N10LS5ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSC034N10LS5ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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