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FDP33N25

FDP33N25

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Part No :

FDP33N25

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 250V 33A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11188 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 19 - Feb 23 2025
PDF
FDP33N25 PDF
Type Description
Series:UniFET™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:94mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:48 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2135 pF @ 25 V
FET Feature:-
Power Dissipation (Max):235W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
FDP33N25 is available at GangBo-ic.com, Please review product page below for detailed information, including FDP33N25 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDP33N25 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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