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BSC060P03NS3EGATMA1

BSC060P03NS3EGATMA1

Image is for reference, please contact us to get the real picture

Part No :

BSC060P03NS3EGATMA1

Manufacturer
Rochester Electronics
Description
BSC060P03 - 20V-250V P-CHANNEL P
Catalog
Transistors - FETs, MOSFETs - Single
Availability
200420 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 01 - Nov 05 2025
PDF
BSC060P03NS3EGATMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:17.7A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.1V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:81 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:6.02 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-1
Package / Case:8-PowerTDFN
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