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IRL60S216

IRL60S216

MOSFET N-CH 60V 195A D2PAK

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IRL60S216

IRL60S216

Image is for reference, please contact us to get the real picture

Part No :

IRL60S216

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 195A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10378 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 29 - Apr 02 2025
PDF
IRL60S216 PDF
Type Description
Series:HEXFET®, StrongIRFET™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:195A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.95mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:255 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:15330 pF @ 25 V
FET Feature:-
Power Dissipation (Max):375W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL60S216 is available at GangBo-ic.com, Please review product page below for detailed information, including IRL60S216 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRL60S216 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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