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IRFR18N15DPBF

IRFR18N15DPBF

MOSFET N-CH 150V 18A DPAK

IRFR18N15DPBF

IRFR18N15DPBF

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Part No :

IRFR18N15DPBF

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 150V 18A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12482 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
IRFR18N15DPBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:125mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:900 pF @ 25 V
FET Feature:-
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR18N15DPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFR18N15DPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFR18N15DPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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