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SIT8008BC-13-33E-39.501000G

SIT8008BC-13-33E-39.501000G

MEMS OSC XO 39.5010MHZ HCMOS

NTMYS021N06CLTWG

NTMYS021N06CLTWG

MOSFET N-CH 60V 9.8A/27A 4LFPAK

0878323620

0878323620

CONN HEADER SMD 36POS 2MM

0526100733

0526100733

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NTMYS021N06CLTWG

NTMYS021N06CLTWG

Image is for reference, please contact us to get the real picture

Part No :

NTMYS021N06CLTWG

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 60V 9.8A/27A 4LFPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
27636000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 26 - Oct 30 2025
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:9.8A (Ta), 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:21mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2V @ 16µA
Gate Charge (Qg) (Max) @ Vgs:5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:410 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 28W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-LFPAK
Package / Case:SOT-1023, 4-LFPAK
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