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FQAF6N90

FQAF6N90

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FQAF6N90

FQAF6N90

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Part No :

FQAF6N90

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 900V 4.5A TO3PF
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11785 pieces
Shipped from
HK warehouse
Expected Shipping Date
Aug 26 - Aug 30 2025
PDF
FQAF6N90 PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.9Ohm @ 2.3A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1.88 pF @ 25 V
FET Feature:-
Power Dissipation (Max):96W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PF
Package / Case:TO-3P-3 Full Pack
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