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SPD06N60C3BTMA1

SPD06N60C3BTMA1

POWER FIELD-EFFECT TRANSISTOR, 6

SPD06N60C3BTMA1

SPD06N60C3BTMA1

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Part No :

SPD06N60C3BTMA1

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
19518 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
SPD06N60C3BTMA1 PDF
Type Description
Series:CoolMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:750mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id:3.9V @ 260µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:620 pF @ 25 V
FET Feature:-
Power Dissipation (Max):74W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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