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FDB13AN06A0

FDB13AN06A0

MOSFET N-CH 60V 10.9A/62A D2PAK

VE-J4H-IW-F3

VE-J4H-IW-F3

DC DC CONVERTER 52V 100W

FDB13AN06A0

FDB13AN06A0

Image is for reference, please contact us to get the real picture

Part No :

FDB13AN06A0

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 60V 10.9A/62A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10197 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 25 - Mar 01 2025
PDF
FDB13AN06A0 PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:10.9A (Ta), 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:13.5mOhm @ 62A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1350 pF @ 25 V
FET Feature:-
Power Dissipation (Max):115W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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