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ISS55EP06LMXTSA1

ISS55EP06LMXTSA1

MOSFET P-CH 60V 180MA SOT23-3

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ISS55EP06LMXTSA1

ISS55EP06LMXTSA1

Image is for reference, please contact us to get the real picture

Part No :

ISS55EP06LMXTSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 60V 180MA SOT23-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12355 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.5Ohm @ 180mA, 10V
Vgs(th) (Max) @ Id:2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs:590 pC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:18 pF @ 30 V
FET Feature:-
Power Dissipation (Max):400mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23-3-5
Package / Case:TO-236-3, SC-59, SOT-23-3
ISS55EP06LMXTSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including ISS55EP06LMXTSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for ISS55EP06LMXTSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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