MOSFET N-CH 35V 11A DPAK/TP-FA
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 35 V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 25mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id: | 2.6V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 17.3 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 960 pF @ 20 V |
FET Feature: | - |
Power Dissipation (Max): | 1W (Ta), 15W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK/TP-FA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPL65R130C7AUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 15A 4VSON |
|
DMN2990UFA-7BZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 510MA 3DFN |
|
IXFN100N50PWickmann / Littelfuse |
MOSFET N-CH 500V 90A SOT-227B |
|
SIHG24N65E-GE3Vishay / Siliconix |
MOSFET N-CH 650V 24A TO247AC |
|
HUF75639S3Rochester Electronics |
MOSFET N-CH 100V 56A I2PAK |
|
AOB12N50LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 12A TO263 |
|
APT6010JLLRoving Networks / Microchip Technology |
MOSFET N-CH 600V 47A ISOTOP |
|
TSM301K12CQ RFGTSC (Taiwan Semiconductor) |
MOSFET P-CH 20V 4.5A 6TDFN |
|
IPD90N10S4L06ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 90A TO252-3 |
|
UPA1724G-E1-ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDD6606Rochester Electronics |
MOSFET N-CH 30V 75A DPAK |
|
PSMN8R5-100ESQRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
MTM761110LBFPanasonic |
MOSFET P-CH 12V 4A WSMINI6 |