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FQP2N90

FQP2N90

MOSFET N-CH 900V 2.2A TO220-3

FQP2N90

FQP2N90

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Part No :

FQP2N90

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 900V 2.2A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
749674 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
PDF
FQP2N90 PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.2Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:500 pF @ 25 V
FET Feature:-
Power Dissipation (Max):85W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
FQP2N90 is available at GangBo-ic.com, Please review product page below for detailed information, including FQP2N90 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQP2N90 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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