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IPC100N04S51R7ATMA1

IPC100N04S51R7ATMA1

MOSFET N-CH 40V 100A 8TDSON-34

IPC100N04S51R7ATMA1

IPC100N04S51R7ATMA1

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Part No :

IPC100N04S51R7ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 40V 100A 8TDSON-34
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10393 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
IPC100N04S51R7ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7V, 10V
Rds On (Max) @ Id, Vgs:1.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs:83 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4810 pF @ 25 V
FET Feature:-
Power Dissipation (Max):115W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-34
Package / Case:8-PowerTDFN
IPC100N04S51R7ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPC100N04S51R7ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPC100N04S51R7ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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