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592D225X0025A2T15H

592D225X0025A2T15H

CAP TANT 2.2UF 20% 25V 1507

FDP054N10

FDP054N10

MOSFET N-CH 100V 120A TO220-3

8-2151998-4

8-2151998-4

OC-PMC-AT-PA-S-F-MA

VE-BNM-IX-F2

VE-BNM-IX-F2

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FDP054N10

FDP054N10

Image is for reference, please contact us to get the real picture

Part No :

FDP054N10

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 100V 120A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10350 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 24 - Feb 28 2025
PDF
FDP054N10 PDF
Type Description
Series:PowerTrench®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:203 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:13280 pF @ 25 V
FET Feature:-
Power Dissipation (Max):263W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
FDP054N10 is available at GangBo-ic.com, Please review product page below for detailed information, including FDP054N10 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDP054N10 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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