MOSFET N-CH 100V 10A/41A TO220F
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta), 41A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 10mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 3.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 52 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2785 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 2.2W (Ta), 36.5W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3F |
Package / Case: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPA60R165CPXKSA1Rochester Electronics |
PFET, 21A I(D), 650V, 0.165OHM, |
|
UPA2719GR-E1-ATRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPT60R028G7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 75A 8HSOF |
|
IRFS7762PBFRochester Electronics |
MOSFET N-CH 75V 85A D2PAK |
|
TP2540N3-G-P002Roving Networks / Microchip Technology |
MOSFET P-CH 400V 86MA TO92-3 |
|
HUF76419S3STRochester Electronics |
MOSFET N-CH 60V 29A D2PAK |
|
IPW60R099C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 14A TO247-3 |
|
MTP1302Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQD12N20LTM-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 9A DPAK |
|
BSC091N03MSCGATMA1Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
IXTA1R4N100PTRLWickmann / Littelfuse |
MOSFET N-CH 1000V 1.4A TO263 |
|
STF34N65M5STMicroelectronics |
MOSFET N-CH 650V 28A TO220FP |
|
BSC057N03MSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 15A/71A TDSON |