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BSC019N04NSGATMA1

BSC019N04NSGATMA1

MOSFET N-CH 40V 30A/100A TDSON

BSC019N04NSGATMA1

BSC019N04NSGATMA1

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Part No :

BSC019N04NSGATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 40V 30A/100A TDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
509350 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 23 - Feb 27 2025
PDF
BSC019N04NSGATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:30A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 85µA
Gate Charge (Qg) (Max) @ Vgs:108 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8800 pF @ 20 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-1
Package / Case:8-PowerTDFN
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