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STI4N62K3

STI4N62K3

MOSFET N-CH 620V 3.8A I2PAK

STI4N62K3

STI4N62K3

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Part No :

STI4N62K3

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 620V 3.8A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
19300 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 17 - Jan 21 2025
PDF
STI4N62K3 PDF
Type Description
Series:SuperMESH3™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):620 V
Current - Continuous Drain (Id) @ 25°C:3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:550 pF @ 50 V
FET Feature:-
Power Dissipation (Max):70W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
STI4N62K3 is available at GangBo-ic.com, Please review product page below for detailed information, including STI4N62K3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STI4N62K3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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