MOSFET P-CH 60V 230MA SST3
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 230mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 5.3Ohm @ 230mA, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 34 pF @ 30 V |
FET Feature: | - |
Power Dissipation (Max): | 200mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SST3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DMP2003UPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 150A PWRDI5060-8 |
|
IRFIBC40GLCPBFVishay / Siliconix |
MOSFET N-CH 600V 3.5A TO220-3 |
|
TPN14006NH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 60V 13A 8TSON-ADV |
|
IPD65R600E6TRRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRL60B216IR (Infineon Technologies) |
MOSFET N-CH 60V 195A TO220AB |
|
IPI65R150CFDXKSA1Rochester Electronics |
MOSFET N-CH 650V 22.4A TO262-3 |
|
NVF2955T1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 2.6A SOT223 |
|
STL70N4LLF5STMicroelectronics |
MOSFET N-CH 40V 70A POWERFLAT |
|
SIHJ10N60E-T1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 10A PPAK SO-8 |
|
IXFT24N80PWickmann / Littelfuse |
MOSFET N-CH 800V 24A TO268 |
|
FDB6030BLRochester Electronics |
MOSFET N-CH 30V 40A R-6 |
|
SI1442DH-T1-BE3Vishay / Siliconix |
MOSFET N-CH 12V 4A SC70-6 |
|
DMP3013SFV-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 12A PWRDI3333 |