MOSFET N-CH 1000V 44A SOT227B
Type | Description |
---|---|
Series: | HiPerFET™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1000 V |
Current - Continuous Drain (Id) @ 25°C: | 44A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 125mOhm @ 26A, 10V |
Vgs(th) (Max) @ Id: | 6V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: | 245 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 6725 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 830W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Supplier Device Package: | SOT-227B |
Package / Case: | SOT-227-4, miniBLOC |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SI2328DS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 1.15A SOT23-3 |
|
IPI075N15N3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
STN4NF20LSTMicroelectronics |
MOSFET N-CH 200V 1A SOT-223 |
|
SSW7N60BTMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRLL014TRPBFVishay / Siliconix |
MOSFET N-CH 60V 2.7A SOT223 |
|
NTTFS4C50NTAGRochester Electronics |
MOSFET N-CH 30V 75A 8WDFN |
|
NTHL190N65S3HFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 20A TO247-3 |
|
SIHP125N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 25A TO220AB |
|
RCX081N20ROHM Semiconductor |
MOSFET N-CH 200V 8A TO220FM |
|
TSM60NB260CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 13A ITO220AB |
|
STH290N4F6-6AGSTMicroelectronics |
MOSFET N-CH 40V 180A H2PAK-6 |
|
IRF9620PBF-BE3Vishay / Siliconix |
MOSFET P-CH 200V 3.5A TO220AB |
|
IAUC100N08S5N031ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 100A TDSON-8-34 |