MOSFET N-CH 600V 7A DPAK
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 600mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 40 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 680 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 78W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AO4443Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 40V 6A 8SOIC |
|
BSC030N04NSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 23A/100A TDSON |
|
IXTQ60N20L2Wickmann / Littelfuse |
MOSFET N-CH 200V 60A TO3P |
|
PMV48XP,215Nexperia |
MOSFET P-CH 20V 3.5A TO236AB |
|
SCT3120AW7TLROHM Semiconductor |
TRANS SJT N-CH 650V 21A TO263-7 |
|
SIHA6N80E-GE3Vishay / Siliconix |
MOSFET N-CH 800V 5.4A TO220 |
|
AO7417Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V 1.9A SC70-6 |
|
STP85NF55STMicroelectronics |
MOSFET N-CH 55V 80A TO220AB |
|
SPB04N60C3ATMA1Rochester Electronics |
MOSFET N-CH 650V 4.5A TO263-3-2 |
|
BSO612CVGRochester Electronics |
BSO612 - 20V-60V COMPLEMENTARY M |
|
2SK1971-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
NX7002AK,215Nexperia |
MOSFET N-CH 60V 190MA TO236AB |
|
C2M0025120DWolfspeed - a Cree company |
SICFET N-CH 1200V 90A TO247-3 |