MOSFET N-CH 60V 20.7A/73A PPAK
Type | Description |
---|---|
Series: | TrenchFET® Gen IV |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 20.7A (Ta), 73A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 7.5V, 10V |
Rds On (Max) @ Id, Vgs: | 5.8mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 3.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 32 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1490 pF @ 30 V |
FET Feature: | - |
Power Dissipation (Max): | 5W (Ta), 62.5W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerPAK® SO-8 |
Package / Case: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPP60R160P6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 23.8A TO220-3 |
|
IRFBG20PBF-BE3Vishay / Siliconix |
MOSFET N-CH 1000V 1.4A TO220AB |
|
STF10N62K3STMicroelectronics |
MOSFET N-CH 620V 8.4A TO220FP |
|
NP82N04NLG-S18-AYRochester Electronics |
MOSFET N-CH 40V 82A TO262 |
|
IMZA65R027M1HXKSA1IR (Infineon Technologies) |
MOSFET 650V NCH SIC TRENCH |
|
IRFD9120Rochester Electronics |
MOSFET P-CH 100V 1A 4DIP |
|
NTD4804N-1GRochester Electronics |
MOSFET N-CH 30V 14.5A/124A IPAK |
|
SI3465DV-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 3A 6TSOP |
|
IPD60R2K0C6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 2.4A TO252-3 |
|
SCTH40N120G2V7AGSTMicroelectronics |
SICFET N-CH 650V 33A H2PAK-7 |
|
FDD6N50FTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 5.5A DPAK |
|
FDBL0110N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 300A 8HPSOF |
|
MTD2N50E1Rochester Electronics |
TRANS MOSFET N-CH 500V 2A RAIL |