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SQ2309ES-T1_GE3

SQ2309ES-T1_GE3

MOSFET P-CH 60V 1.7A TO236

SQ2309ES-T1_GE3

SQ2309ES-T1_GE3

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Part No :

SQ2309ES-T1_GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 60V 1.7A TO236
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10746 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
SQ2309ES-T1_GE3 PDF
Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:336mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:265 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236 (SOT-23)
Package / Case:TO-236-3, SC-59, SOT-23-3
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