MOSFET P-CH 30V 5A 6TSOP
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Not For New Designs |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
Rds On (Max) @ Id, Vgs: | 44mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 13 nC @ 4.5 V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 1180 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 2W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-TSOP |
Package / Case: | SC-74, SOT-457 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
STH2N120K5-2AGSTMicroelectronics |
MOSFET N-CH 1200V 1.5A H2PAK-2 |
|
PCP1302-TD-HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 3A SOT89/PCP-1 |
|
TK3A60DA(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 2.5A TO220SIS |
|
FDP22N50NSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 22A TO220-3 |
|
IRF520PBFVishay / Siliconix |
MOSFET N-CH 100V 9.2A TO220AB |
|
BSC040N10NS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 100A TDSON |
|
DMT10H009LFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 13A/50A PWRDI |
|
R6004ENJTLROHM Semiconductor |
MOSFET N-CH 600V 4A LPTS |
|
IXTH24N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 24A TO247 |
|
PMZ950UPEYLNexperia |
MOSFET P-CH 20V 500MA DFN1006-3 |
|
IRFD420PBFVishay / Siliconix |
MOSFET N-CH 500V 370MA 4DIP |
|
BUK7208-40B,118Nexperia |
MOSFET N-CH 40V 75A DPAK |
|
IXFB82N60Q3Wickmann / Littelfuse |
MOSFET N-CH 600V 82A PLUS264 |