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PH3120L,115

PH3120L,115

POWER FIELD-EFFECT TRANSISTOR, 1

PH3120L,115

PH3120L,115

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Part No :

PH3120L,115

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 1
Catalog
Transistors - FETs, MOSFETs - Single
Availability
178617 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
PH3120L,115 PDF
Type Description
Series:TrenchMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.65mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:48.5 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4.457 pF @ 10 V
FET Feature:-
Power Dissipation (Max):62.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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