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SIA108DJ-T1-GE3

SIA108DJ-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SIA108DJ-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 80V 6.6A/12A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15910 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 03 - Jul 07 2025
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:6.6A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Rds On (Max) @ Id, Vgs:38mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:545 pF @ 40 V
FET Feature:-
Power Dissipation (Max):3.5W (Ta), 19W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SC-70-6 Single
Package / Case:PowerPAK® SC-70-6
SIA108DJ-T1-GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SIA108DJ-T1-GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SIA108DJ-T1-GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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