Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | - |
Technology: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | - |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
TSM2301ACX RFGTSC (Taiwan Semiconductor) |
MOSFET P-CHANNEL 20V 2.8A SOT23 |
![]() |
IXTR40P50PWickmann / Littelfuse |
MOSFET P-CH 500V 22A ISOPLUS247 |
![]() |
IPB052N04NGRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
CPH3324-TL-ERochester Electronics |
MOSFET P-CH 60V 1.2A 3CPH |
![]() |
NVMFS5C638NLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 26A/133A 5DFN |
![]() |
FQD10N20LTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 7.6A TO252 |
![]() |
IPA50R350CPXKSA1Rochester Electronics |
10A, 500V, 0.35OHM, N-CHANNEL, |
![]() |
IXTH360N055T2Wickmann / Littelfuse |
MOSFET N-CH 55V 360A TO247 |
![]() |
IRFR3504ZTRPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 42A DPAK |
![]() |
FDPF20N50Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 20A TO220F |
![]() |
BSC080P03LSGAUMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 16A/30A TDSON-8 |
![]() |
IXTH160N10TWickmann / Littelfuse |
MOSFET N-CH 100V 160A TO247 |
![]() |
DMT6010LFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 13A PWRDI3333 |