MOSFET N-CH 600V 38A TO247
Type | Description |
---|---|
Series: | aMOS5™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 38A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 95mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 78 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4010 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 378W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BUK9M43-100EXNexperia |
MOSFET N-CH 100V 25A LFPAK33 |
|
SSP2N60BRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDA16N50Rochester Electronics |
MOSFET N-CH 500V 16.5A TO3PN |
|
FQP4N90CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 900V 4A TO220-3 |
|
IRFBE30LPBFVishay / Siliconix |
MOSFET N-CH 800V 4.1A I2PAK |
|
SKI06106Sanken Electric Co., Ltd. |
MOSFET N-CH 60V 57A TO263 |
|
SI7868ADP-T1-E3Vishay / Siliconix |
MOSFET N-CH 20V 40A PPAK SO-8 |
|
SISS60DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 50.1/181.8A PPAK |
|
SIHLR120-GE3Vishay / Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
|
PMPB20XNEA,115Rochester Electronics |
7.5A, 20V, N CHANNEL, SILICON, M |
|
RM45N60DFRectron USA |
MOSFET N-CHANNEL 60V 45A 8DFN |
|
2SK4087LS-1ERochester Electronics |
MOSFET N-CH 600V 9.2A TO220F-3FS |
|
APT20M18LVFRGRoving Networks / Microchip Technology |
MOSFET N-CH 200V 100A TO264 |