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NVF6P02T3G

NVF6P02T3G

MOSFET P-CH 20V 10A SOT-223

NVF6P02T3G

NVF6P02T3G

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Part No :

NVF6P02T3G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 20V 10A SOT-223
Catalog
Transistors - FETs, MOSFETs - Single
Availability
968196 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
PDF
NVF6P02T3G PDF
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Not For New Designs
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:50mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 16 V
FET Feature:-
Power Dissipation (Max):8.3W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223 (TO-261)
Package / Case:TO-261-4, TO-261AA
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