HEATSINK 25X25X15MM R-TAB
MOSFET N-CH 200V 317A SP6
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 317A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 6mOhm @ 158.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: | 448 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 27400 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 1136W (Tc) |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Supplier Device Package: | SP6 |
Package / Case: | SP6 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SPW35N60CFDFKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 34.1A TO247-3 |
|
NDP6020PRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
|
SPB02N60S5Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTB6N60T4Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
APT38F50JRoving Networks / Microchip Technology |
MOSFET N-CH 500V 38A ISOTOP |
|
NTMS4700NR2GRochester Electronics |
MOSFET N-CH 30V 8.6A 8SOIC |
|
BSS84-F2-0000HF |
P-CH MOSFET 60V 0.17A SOT-23-3L |
|
PSMN1R0-40YLDXNexperia |
MOSFET N-CH 40V 100A LFPAK56 |
|
SI4866DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 12V 11A 8SO |
|
STD12N60DM6STMicroelectronics |
MOSFET N-CH 600V 10A DPAK |
|
BSS138BKW-B115Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IPP17N25S3100AKSA1IR (Infineon Technologies) |
MOSFET N-CH 250V 17A TO220-3 |
|
DMN3731UFB4-7BZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 1.2A 3DFN |