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SQJ411EP-T1_GE3

SQJ411EP-T1_GE3

MOSFET P-CH 12V 60A PPAK SO-8

SQJ411EP-T1_GE3

SQJ411EP-T1_GE3

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Part No :

SQJ411EP-T1_GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 12V 60A PPAK SO-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11471 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 24 - Feb 28 2025
PDF
SQJ411EP-T1_GE3 PDF
Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:5.8mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:150 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:9100 pF @ 6 V
FET Feature:-
Power Dissipation (Max):68W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
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