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IPN80R1K2P7ATMA1

IPN80R1K2P7ATMA1

MOSFET N-CH 800V 4.5A SOT223

IPN80R1K2P7ATMA1

IPN80R1K2P7ATMA1

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Part No :

IPN80R1K2P7ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 800V 4.5A SOT223
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15490 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IPN80R1K2P7ATMA1 PDF
Type Description
Series:CoolMOS™ P7
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id:3.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:300 pF @ 500 V
FET Feature:-
Power Dissipation (Max):6.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223
Package / Case:TO-261-3
IPN80R1K2P7ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPN80R1K2P7ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPN80R1K2P7ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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